Charle losses of N-doped trench cellsRISCH, L; MALY, R; BERGNER, W et al.Japanese journal of applied physics. 1988, Vol 27, Num 11, pp L2223-L2226, issn 0021-4922, part 2Article

Tracking degradation and pyrolysis of EPDM insulatorsPEREIRA NUNES, S; DA COSTA, R. A; BARBOSA, S. P et al.IEEE transactions on electrical insulation. 1989, Vol 24, Num 1, pp 99-105, issn 0018-9367, 7 p.Article

Effect of annealing on the ac leakage components of the ZnO varistor. II, Capacitive currentGUPTA, T. K; STRAUB, W. D.Journal of applied physics. 1990, Vol 68, Num 2, pp 851-855, issn 0021-8979Article

Hot-electron-induced minority-carrier generation in bipolar junction transistorsISHIUCHI, H; TAMBA, N; SHOTT, J. D et al.IEEE electron device letters. 1990, Vol 11, Num 11, pp 490-492, issn 0741-3106, 3 p.Article

Sub-terahertz testing of silicon MOSFETSTILLMAN, W; VEKSLER, D; ELKHATIB, T. A et al.Electronics Letters. 2008, Vol 44, Num 22, pp 1325-1327, issn 0013-5194, 3 p.Article

Field experience with non-ceramic hollow-core insulatorsSÖRQVIST, T; GUBANSKI, S. M; VLASTOS, A. E et al.IEE conference publication. 1999, pp 4.42.S19-4.45.S19, issn 0537-9989, isbn 0-85296-719-5Conference Paper

A proposal of a method for analysing the leakage characteristics of 1.3 μm semiconductor buried heterostructure lasersUMEBU, I.Semiconductor science and technology. 1993, Vol 8, Num 1, pp 63-66, issn 0268-1242Article

Water formation in air-encapsulated capsules with hydrogen dissolved in sidewall metalsIWAMATSU, S.Journal of the Electrochemical Society. 1991, Vol 138, Num 6, pp L17-L19, issn 0013-4651Article

The effect of phosphorus doping on the direct current leakage of anodic oxide films on tantalumTRIPP, T. B; FOLEY, K. B.Journal of the Electrochemical Society. 1990, Vol 137, Num 8, pp 2528-2530, issn 0013-4651, 3 p.Article

The characterization of the variability of silicon wafers by leakage current measurementsMURRAY, E. M; SUGANO, T; ASADA, K et al.Japanese journal of applied physics. 1986, Vol 25, Num 2, pp L99-L101, issn 0021-4922, 2Article

OPTIMISATION ET REALISATION D'UNE PERIPHERIE PLANAR HAUTE TENSION A POCHE = OPTIMIZATION AND IMPLEMENTATION OF A HIGH VOLTAGE PLANAR PERIPHERY POCKET TYPENgo, Le Thuy; Guillemot, Nadine.1997, 172 p.Thesis

Leakage current detection in cryogenic current comparator bridgesELMQUIST, R. E.IEEE transactions on instrumentation and measurement. 1993, Vol 42, Num 2, pp 167-169, issn 0018-9456Conference Paper

Calcul de la résistance de fuite des systèmes d'électrodes de forme complexe dans un milieu stratifiéIVLIEV, E. A.Èlektričestvo. 1988, Num 1, pp 32-38, issn 0013-5380Article

Simulation of the magnetic field due to defects and verification using high-T_c SQUIDJENG, J. T; HORNG, H. E; YANG, H. C et al.Physica. C. Superconductivity and its applications. 2002, Vol 367, Num 1-4, pp 298-302Article

Atomic scale defects involved in stress induced leakage currents in very thin oxides on siliconLENAHAN, P. M; KANG, A. Y; CAMPBELL, J. P et al.SPIE proceedings series. 2002, pp 608-615, isbn 0-8194-4500-2, 2VolConference Paper

The effect of copper contamination on field overlap edges and perimeter junction leakage currentVERMEIRE, B; LEE, L; PARKS, H. G et al.IEEE transactions on semiconductor manufacturing. 1998, Vol 11, Num 2, pp 232-238, issn 0894-6507Conference Paper

A model for bipolar current leakage in cell stacks with separate electrolyte loopsMIN-ZHI YANG; HAN WU; SELMAN, J. R et al.Journal of applied electrochemistry. 1989, Vol 19, Num 2, pp 247-254, issn 0021-891XArticle

I/O self-leakage testMUHTAROGLU, Ali; PROVOST, Benoit; RAHAL-ARABI, Tawfik et al.International Test Conference. 2004, pp 903-906, isbn 0-7803-8580-2, 1Vol, 4 p.Conference Paper

Field testing of silicone rubber compositionsGUSTAVSSON, T. G; GUBANSKI, S. M.IEE conference publication. 1999, pp 4.46.S19-4.49.S19, issn 0537-9989, isbn 0-85296-719-5Conference Paper

Failure analysis of microelectronic devices for space applicationsKRISHNARAJU, V; VENKATESH, K; RAVINDRA, M et al.SPIE proceedings series. 1998, pp 1018-1021, isbn 0-8194-2756-X, 2VolConference Paper

Influence of metal impurities on leakage current of Si N⁺P diodeMIYAZAKI, M; SANO, M; SUMITA, S et al.Japanese journal of applied physics. 1991, Vol 30, Num 2B, pp L295-L297, issn 0021-4922, 2Article

A HIGH-LEVEL TECHNIQUE FOR ESTIMATION AND OPTIMIZATION OF LEAKAGE POWER FOR FULL ADDERSHRIVAS, Jayram; AKASHE, Shy Am; TIWARI, Nitesh et al.International journal of nanoscience. 2013, Vol 12, Num 2, 1350011.1-1350011.6Article

Power-gating technique for network-on-chip buffersCASU, M. R; YADAV, M. K; ZAMBONI, M et al.Electronics letters. 2013, Vol 49, Num 23, pp 1438-1440, issn 0013-5194, 3 p.Article

Future prospects of DRAM: emerging alternativesCHOI, Yoonsuk; LATIFI, Shahram.International journal of high performance systems architecture (Print). 2012, Vol 4, Num 1, pp 1-12, issn 1751-6528, 12 p.Article

Recessed source concept in nanoscale vertical surrounding gate (VSG) MOSFETs for controlling short-channel effectsSUBRAHMANYAM, B; JAGADESH KUMAR, M.Physica. E, low-dimentional systems and nanostructures. 2009, Vol 41, Num 4, pp 671-676, issn 1386-9477, 6 p.Article